Precise estimation of dynamic junction temperature of SiC transistors for lifetime prediction of power modules used in three-phase inverters
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Universidade Federal de Minas Gerais
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Precise transient temperature measurement is fundamental to estimate lifetime of power modules, especially those made with SiC transistors having very low thermal capacitance. This paper shows a precise method to estimate dynamic temperature of SiC components composing a power module used in three-phase inverters. This method is based on the use of a fast thermal camera to precisely measure thermal impedance of each die. Results of thermal camera measurements are validated by comparison with classical on-state resistance measurements to estimate junction temperature. Thermal impedance model is then coupled with precise loss calculation in order to predict dynamic die temperature during operation in a three-phase inverter. Measurements of the temperature variation of SiC dies conducting typical currents of a 540 V/7.5 kW three-phase inverter for aeronautical applications show the accuracy of the developed model for dynamic junction temperature estimation.
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Reliability, Estresse Termico, Precise estimation of dynamic junction temperature of SiC transistors for lifetime prediction of power modules used in three-phase inverters. It was found that the thermal impedance of the die does not significantly vary with its losses, but it does vary by 10-20% with respect to the current direction inside the die. The method is based on temperature measured with fast and accurate infrared thermal camera, for different current direction and through the SiC die., Thermal cycle, SiC MOSFET, Thermal camera, Thermal impedance, Semiconductor losses
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https://www.sciencedirect.com/science/article/pii/S0026271423002378