Precise estimation of dynamic junction temperature of SiC transistors for lifetime prediction of power modules used in three-phase inverters

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dc.creatorBernardo Cougo
dc.creatorGilles Segond
dc.creatorAlice Helena T. Silva
dc.creatorLenin Martins F. Morais
dc.creatorMarco Vinício T. Andrade
dc.creatorDuc Hoan Tran
dc.date.accessioned2025-05-29T14:18:43Z
dc.date.accessioned2025-09-09T01:04:45Z
dc.date.available2025-05-29T14:18:43Z
dc.date.issued2023
dc.identifier.doi10.1016/j.microrel.2023.115137
dc.identifier.issn00262714
dc.identifier.urihttps://hdl.handle.net/1843/82622
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.rightsAcesso Restrito
dc.subjectSemicondutores complementares de óxido metálico
dc.subject.otherReliability
dc.subject.otherEstresse Termico
dc.subject.otherPrecise estimation of dynamic junction temperature of SiC transistors for lifetime prediction of power modules used in three-phase inverters. It was found that the thermal impedance of the die does not significantly vary with its losses, but it does vary by 10-20% with respect to the current direction inside the die. The method is based on temperature measured with fast and accurate infrared thermal camera, for different current direction and through the SiC die.
dc.subject.otherThermal cycle, SiC MOSFET, Thermal camera, Thermal impedance, Semiconductor losses
dc.titlePrecise estimation of dynamic junction temperature of SiC transistors for lifetime prediction of power modules used in three-phase inverters
dc.typeArtigo de periódico
local.citation.spage115137
local.citation.volume150
local.description.resumoPrecise transient temperature measurement is fundamental to estimate lifetime of power modules, especially those made with SiC transistors having very low thermal capacitance. This paper shows a precise method to estimate dynamic temperature of SiC components composing a power module used in three-phase inverters. This method is based on the use of a fast thermal camera to precisely measure thermal impedance of each die. Results of thermal camera measurements are validated by comparison with classical on-state resistance measurements to estimate junction temperature. Thermal impedance model is then coupled with precise loss calculation in order to predict dynamic die temperature during operation in a three-phase inverter. Measurements of the temperature variation of SiC dies conducting typical currents of a 540 V/7.5 kW three-phase inverter for aeronautical applications show the accuracy of the developed model for dynamic junction temperature estimation.
local.publisher.countryBrasil
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELÉTRICA
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELETRÔNICA
local.publisher.initialsUFMG
local.url.externahttps://www.sciencedirect.com/science/article/pii/S0026271423002378

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