Silicon nanomembranes with hybrid crystal orientations and strain states
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Universidade Federal de Minas Gerais
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Artigo de periódico
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Methods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. We combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar arrays of different orientations and strain states of Si in a single membrane, which is then readily transferable to other substrates, including flexible supports. As examples, regions of Si(001) and Si(110) or strained Si(110) are combined to form a multicomponent, single substrate with high-quality narrow interfaces. We perform extensive structural characterization of all interfaces and measure charge-carrier mobilities in different regions of a 2D quilt. The method is readily extendable to include varying compositions or different classes of materials.
Abstract
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Epitaxia, Nanomembranas, Interfaces (Ciências fisicas)
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Epitaxy, Selective growth, Hybrid crystalline materials, Silicon nanomembranes, Interfaces, Strain engineering
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https://pubs.acs.org/doi/10.1021/acsami.7b14291