Silicon nanomembranes with hybrid crystal orientations and strain states

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dc.creatorShelley A. Scott
dc.creatorMax G. Lagally
dc.creatorChristoph Friedrich Deneke
dc.creatorDeborah M. Paskiewicz
dc.creatorHyuk Ju Ryu
dc.creatorÂngelo Malachias de Souza
dc.creatorStefan Baunack
dc.creatorOliver G. Schmidt
dc.creatorDonald E. Savage
dc.creatorMark A. Eriksson
dc.date.accessioned2023-03-10T13:15:48Z
dc.date.accessioned2025-09-09T01:25:58Z
dc.date.available2023-03-10T13:15:48Z
dc.date.issued2017
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPESP - Fundação de Amparo à Pesquisa do Estado de São Paulo
dc.identifier.doihttps://doi.org/10.1021/acsami.7b14291
dc.identifier.issn1944-8252
dc.identifier.urihttps://hdl.handle.net/1843/50789
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofACS Applied Materials & Interfaces
dc.rightsAcesso Restrito
dc.subjectEpitaxia
dc.subjectNanomembranas
dc.subjectInterfaces (Ciências fisicas)
dc.subject.otherEpitaxy
dc.subject.otherSelective growth
dc.subject.otherHybrid crystalline materials
dc.subject.otherSilicon nanomembranes
dc.subject.otherInterfaces
dc.subject.otherStrain engineering
dc.titleSilicon nanomembranes with hybrid crystal orientations and strain states
dc.typeArtigo de periódico
local.citation.epage42382
local.citation.issue48
local.citation.spage42372
local.citation.volume9
local.description.resumoMethods to integrate different crystal orientations, strain states, and compositions of semiconductors in planar and preferably flexible configurations may enable nontraditional sensing-, stimulating-, or communication-device applications. We combine crystalline-silicon nanomembranes, patterning, membrane transfer, and epitaxial growth to demonstrate planar arrays of different orientations and strain states of Si in a single membrane, which is then readily transferable to other substrates, including flexible supports. As examples, regions of Si(001) and Si(110) or strained Si(110) are combined to form a multicomponent, single substrate with high-quality narrow interfaces. We perform extensive structural characterization of all interfaces and measure charge-carrier mobilities in different regions of a 2D quilt. The method is readily extendable to include varying compositions or different classes of materials.
local.identifier.orcidhttps://orcid.org/0000-0002-1263-011X
local.identifier.orcidhttps://orcid.org/0000-0002-8556-386X
local.identifier.orcidhttps://orcid.org/0000-0002-8703-4283
local.identifier.orcidhttps://orcid.org/0000-0002-6628-0696
local.identifier.orcidhttps://orcid.org/0000-0001-9503-8367
local.identifier.orcidhttps://orcid.org/0000-0001-8515-4196
local.identifier.orcidhttps://orcid.org/0000-0002-3130-9735
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.acs.org/doi/10.1021/acsami.7b14291

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