Water incorporation in graphene transferred onto SiO2/Si investigated by isotopic labeling
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Universidade Federal de Minas Gerais
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Artigo de periódico
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Resumo
H and O incorporation in single-layer graphene (SLG) transferred onto SiO2/Si
substrates following annealing in water vapor (H2O) was investigated. The use of isotopically
enriched water in conjunction with nuclear reaction analysis enabled us to specifically investigate the effect of water annealing, among other modification agents of graphene like ambient exposure.
Results revealed that incorporation of these species occurs by two distinct mechanisms, depending
on the temperature range considered. From 100 to 300 °C, physisorption of H2O molecules in the
SLG/SiO2/Si structure is the dominant process. For 400 °C and above, chemisorption is favored due
to the creation of defects in the graphene lattice. Transport measurements demonstrated that the
observed physico-chemical and structural modifications have a huge impact on the electrical
characteristics of these structures.
Abstract
Assunto
Adsorção, Grafeno
Palavras-chave
Adsorption, Annealing, Layers, Two dimensional materials
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https://pubs.acs.org/doi/full/10.1021/acs.jpcc.5b06780