Water incorporation in graphene transferred onto SiO2/Si investigated by isotopic labeling

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dc.creatorNicolau Molina Bom
dc.creatorGabriel Vieira Soares
dc.creatorMyriano Henriques de Oliveira Junior
dc.creatorJoão Marcelo Jordão Lopes
dc.creatorHenning Riechert
dc.creatorCláudio Radtke
dc.date.accessioned2025-07-25T18:59:44Z
dc.date.accessioned2025-09-09T00:50:00Z
dc.date.available2025-07-25T18:59:44Z
dc.date.issued2015
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.description.sponsorshipINCT – Instituto nacional de ciência e tecnologia (Antigo Instituto do Milênio)
dc.description.sponsorshipFAPERGS - Fundação de Amparo à Pesquisa do Estado do Rio Grande do Sul
dc.identifier.doihttps://doi.org/10.1021/acs.jpcc.5b06780
dc.identifier.issn1932-7455
dc.identifier.urihttps://hdl.handle.net/1843/83851
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofThe Journal of Physical Chemistry C
dc.rightsAcesso Restrito
dc.subjectAdsorção
dc.subjectGrafeno
dc.subject.otherAdsorption
dc.subject.otherAnnealing
dc.subject.otherLayers
dc.subject.otherTwo dimensional materials
dc.titleWater incorporation in graphene transferred onto SiO2/Si investigated by isotopic labeling
dc.typeArtigo de periódico
local.citation.epage206
local.citation.issue1
local.citation.spage201
local.citation.volume120
local.description.resumoH and O incorporation in single-layer graphene (SLG) transferred onto SiO2/Si substrates following annealing in water vapor (H2O) was investigated. The use of isotopically enriched water in conjunction with nuclear reaction analysis enabled us to specifically investigate the effect of water annealing, among other modification agents of graphene like ambient exposure. Results revealed that incorporation of these species occurs by two distinct mechanisms, depending on the temperature range considered. From 100 to 300 °C, physisorption of H2O molecules in the SLG/SiO2/Si structure is the dominant process. For 400 °C and above, chemisorption is favored due to the creation of defects in the graphene lattice. Transport measurements demonstrated that the observed physico-chemical and structural modifications have a huge impact on the electrical characteristics of these structures.
local.identifier.orcidhttps://orcid.org/0000-0001-7111-8231
local.identifier.orcidhttps://orcid.org/0000-0002-4108-7662
local.identifier.orcidhttps://orcid.org/0000-0002-2404-3879
local.identifier.orcidhttps://orcid.org/0000-0001-5268-1862
local.identifier.orcidhttps://orcid.org/0000-0003-3469-4920
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://pubs.acs.org/doi/full/10.1021/acs.jpcc.5b06780

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