Micrometric displacement measurement using CMOS 0.35µm technology Quad-Cell

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dc.creatorGabriel P. Lemos
dc.creatorMaria Tereza C. Souza
dc.creatorVictor F. Muniz
dc.creatorFrank Sill Torres
dc.creatorLuciana P. Salles
dc.date.accessioned2025-03-21T14:52:08Z
dc.date.accessioned2025-09-09T00:49:08Z
dc.date.available2025-03-21T14:52:08Z
dc.date.issued2016
dc.identifier.doi10.1109/INSCIT.2016.7598191
dc.identifier.urihttps://hdl.handle.net/1843/80816
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.rightsAcesso Restrito
dc.subjectSinais e símbolos
dc.subjectInstrumentos de medição
dc.subjectCircuitos de sinais mistos
dc.subjectCircuitos eletrônicos - Projetos
dc.subject.otherDisplacement Measurements - Measurement Methodology
dc.subject.otherCMOS Technology
dc.subject.otherPhotodiode - Laser Beam
dc.subject.otherSpot Size - Light Beam
dc.subject.otherPrinted Circuit Board
dc.subject.otherBeam Spot - Spot Position
dc.subject.otherPolarizing Filter
dc.subject.otherMirror Surface
dc.subject.otherStep Flow
dc.subject.otherSpot Radius
dc.titleMicrometric displacement measurement using CMOS 0.35µm technology Quad-Cell
dc.typeArtigo de evento
local.citation.epage18
local.citation.spage14
local.description.resumoPrecise displacement estimation has high demands on the measurement system, but permits a wide range of applications. This paper presents a new methodology for precise micrometric displacement measurement utilizing a Quad-Cell (QC), Position Sensitive Detector (PSD) realized in a 0.35μm CMOS technology. Experimental results indicate high precision in the range of several micrometers for displacements of up to 2,400μm. Further, extracted curves permit the choice of the best trade-off between precision and maximum measureable displacement.
local.publisher.countryBrasil
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELETRÔNICA
local.publisher.initialsUFMG
local.url.externahttps://ieeexplore.ieee.org/document/7598191

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