Current sharing dynamics during IGBT ZVS turn-on in a hybrid Si IGBT/SiC MOSFET switch

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dc.creatorMarco Andrade
dc.creatorBernardo Cougo
dc.creatorLenin Martins F. Morais
dc.date.accessioned2025-05-30T13:27:06Z
dc.date.accessioned2025-09-09T00:45:30Z
dc.date.available2025-05-30T13:27:06Z
dc.date.issued2023
dc.identifier.doihttps://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264663
dc.identifier.urihttps://hdl.handle.net/1843/82649
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartof25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
dc.rightsAcesso Restrito
dc.subjectEletrônica de potência
dc.subject.otherInsulated gate bipolar transistors , Semiconductor device modeling , MOSFET , Inductance , Semiconductor device measurement , Silicon carbide , Europe
dc.subject.otherSiC MOSFET , IGBT , Power semiconductor device , Paralleling , Parasitic Inductance
dc.subject.otherHybrid Switch
dc.subject.otherCurrent Dynamics , MOSFET Switches , Si Hybrid , Total Loss , Conduction Loss , Silicon Carbide , Switching Loss , Extra Loss , Parasitic Inductance , Silicon Carbide MOSFET , Low Voltage , Power Loss , Function Of Frequency , Duty Cycle , Lower Side , Voltage Drop , Series Resistance , Power Conversion , Test Setup , Extra Energy , Gallium Nitride , Dead Time , Current Transfer , Switching Frequency , Blocking Voltage , Forward Bias , Switching Pattern , Thermal Balance , Current Waveforms
dc.titleCurrent sharing dynamics during IGBT ZVS turn-on in a hybrid Si IGBT/SiC MOSFET switch
dc.typeArtigo de evento
local.citation.spage1
local.description.resumoThis article describes the current sharing dynamics of a 1200V Si IGBT/SiC MOSFET hybrid switch for Aircraft Applications. Different switching sequences are utilized to switch the Si IGBT at zero voltage in order to reduce total losses. However, during these switching instants, two effects are usually neglected or are not well taken into account. The first is extra conduction losses during the period where SiC MOSFET conducts all the current to ensure IGBT soft switching. The second one is that the current in the IGBT slowly rises after it turns on due to parasitic inductance between IGBT, SiC MOSFET and diode. The focus of this work is to discuss and precisely model these effects and their impact in hybrid switch losses. A method to measure the dynamic behavior of this hybrid switch and precisely determine associated losses is presented and experimentally verified.
local.publisher.countryBrasil
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELÉTRICA
local.publisher.departmentENG - DEPARTAMENTO DE ENGENHARIA ELETRÔNICA
local.publisher.initialsUFMG
local.url.externahttps://ieeexplore.ieee.org/document/10264663

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