Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors
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Universidade Federal de Minas Gerais
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In this work we present a method to grow Sb2S3 thin films with a potential use as absorber layers in solar cell
structures. The films were grown on several substrates: soda-lime glass, Mo coated soda-lime glass and Si. The
Sb-Se precursor's films were deposited by RF magnetron sputtering and then selenized under a H2Se gas flow.
Different selenization temperatures were tested and analysed. Compositional and morphological analyses were
performed by Energy Dispersive Spectroscopy and Scanning Electron Microscopy, respectively. Phase identification and structural characterization were done by X-ray Diffraction and Raman scattering spectroscopy
showing that Sb2Se3 is the dominant phase with an orthorhombic crystalline structure. Traces of rhombohedral
and amorphous Se secondary phases were also observed supported by their Se-rich compositions. Visible-NIR
reflectance measurements allowed to extract a direct bandgap with a value close to 1.06 eV. Photoluminescence
spectroscopy shows an emission with a broad band at 0.85 eV for samples selenized at lower temperatures and
an intense peak at 0.75 eV for the sample selenized at higher temperatures. Electrical characterization shows low
free hole concentrations and mobilities. At low temperatures, the nearest neighbour hopping is the dominant
mechanism for the electronic transport for the analysed samples. Both electrical and optical properties are influenced by the type of defects present on samples. A discussion is made on the properties that need to be
improved in order that these films can be integrated into thin film solar cells.
Abstract
Assunto
Filmes finos, Células solares
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Thin films, Solar cells
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https://www.sciencedirect.com/science/article/pii/S0927024818304070?via%3Dihub