Growth of Sb2Se3 thin films by selenization of RF sputtered binary precursors

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dc.creatorAigul Shongalova
dc.creatorPedro M. P. Salomé
dc.creatorPaulo A. Fernandes
dc.creatorMaria do Rosário Pimenta Correia
dc.creatorJennifer Cláudia Passos Teixeira
dc.creatorJoaquim Fernando Monteiro de Carvalho Pratas Leitão
dc.creatorJuan Carlos González Pérez
dc.creatorSamaneh Ranjbar
dc.creatorSiddhartha Garud
dc.creatorBart Vermang
dc.creatorJosé Miguel Vaz da Cunha
dc.date.accessioned2024-03-12T12:03:59Z
dc.date.accessioned2025-09-09T01:10:57Z
dc.date.available2024-03-12T12:03:59Z
dc.date.issued2018
dc.description.sponsorshipCNPq - Conselho Nacional de Desenvolvimento Científico e Tecnológico
dc.description.sponsorshipFAPEMIG - Fundação de Amparo à Pesquisa do Estado de Minas Gerais
dc.description.sponsorshipCAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior
dc.identifier.doihttps://doi.org/10.1016/j.solmat.2018.08.003
dc.identifier.issn1879-3398
dc.identifier.urihttps://hdl.handle.net/1843/65684
dc.languageeng
dc.publisherUniversidade Federal de Minas Gerais
dc.relation.ispartofSolar Energy Materials and Solar Cells
dc.rightsAcesso Restrito
dc.subjectFilmes finos
dc.subjectCélulas solares
dc.subject.otherThin films
dc.subject.otherSolar cells
dc.titleGrowth of Sb2Se3 thin films by selenization of RF sputtered binary precursors
dc.typeArtigo de periódico
local.citation.epage226
local.citation.spage219
local.citation.volume187
local.description.resumoIn this work we present a method to grow Sb2S3 thin films with a potential use as absorber layers in solar cell structures. The films were grown on several substrates: soda-lime glass, Mo coated soda-lime glass and Si. The Sb-Se precursor's films were deposited by RF magnetron sputtering and then selenized under a H2Se gas flow. Different selenization temperatures were tested and analysed. Compositional and morphological analyses were performed by Energy Dispersive Spectroscopy and Scanning Electron Microscopy, respectively. Phase identification and structural characterization were done by X-ray Diffraction and Raman scattering spectroscopy showing that Sb2Se3 is the dominant phase with an orthorhombic crystalline structure. Traces of rhombohedral and amorphous Se secondary phases were also observed supported by their Se-rich compositions. Visible-NIR reflectance measurements allowed to extract a direct bandgap with a value close to 1.06 eV. Photoluminescence spectroscopy shows an emission with a broad band at 0.85 eV for samples selenized at lower temperatures and an intense peak at 0.75 eV for the sample selenized at higher temperatures. Electrical characterization shows low free hole concentrations and mobilities. At low temperatures, the nearest neighbour hopping is the dominant mechanism for the electronic transport for the analysed samples. Both electrical and optical properties are influenced by the type of defects present on samples. A discussion is made on the properties that need to be improved in order that these films can be integrated into thin film solar cells.
local.identifier.orcidhttps://orcid.org/0000-0002-7352-9007
local.identifier.orcidhttps://orcid.org/0000-0002-1050-2958
local.identifier.orcidhttps://orcid.org/0000-0002-1860-7797
local.identifier.orcidhttps://orcid.org/0000-0003-3781-0085
local.identifier.orcidhttps://orcid.org/0000-0002-3155-6832
local.identifier.orcidhttps://orcid.org/0000-0001-8131-3313
local.identifier.orcidhttps://orcid.org/0000-0001-9155-1657
local.identifier.orcidhttps://orcid.org/0000-0003-2597-7152
local.identifier.orcidhttps://orcid.org/0000-0003-2308-3307
local.identifier.orcidhttps://orcid.org/0000-0003-2669-2087
local.identifier.orcidhttps://orcid.org/0000-0002-1622-0193
local.publisher.countryBrasil
local.publisher.departmentICX - DEPARTAMENTO DE FÍSICA
local.publisher.initialsUFMG
local.url.externahttps://www.sciencedirect.com/science/article/pii/S0927024818304070?via%3Dihub

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